4435 Datasheet, PDF (1/5 Pages) GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. – P-Channel MOSFET

FEATURES
Advanced Trench Process Technology
High Density Cell Design for Ultra Low On-Resistance
VDS=-30V,ID=-8A
RDS(on) (m-ohm)
0.020 @ VGS = - 10V ,ID= -8A
0.030 @ VGS = -4.5V,ID= -5A
APPLICATIONS
Load Switches
Battery Switch
Plastic-Encapsulate Mosfets
4435
P-Channel MOSFET
S
S1
S2
G
S3
G4
8D
7D
6D
5D
D
Top View
SOP-8
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuou5 Drain Current (T_J = 150OC)^a
TA = 25 ^OC
Symbol
V_DS
V_GS
I_D
Pul5ed Drain Current
continuou5 Source Current (Diode Conduction)^a
Maximum PoWer Di55ipation^a
operating Junction and Storage Temperature Range
= TA 25 ^OC
= TA 70 ^OC
I_DM
I_S
P_D
T_J, T_5tg
10 secs
Steady State
−30
±20
−8.0
−50
−2.1
−1.25
2.5
1.5
1.6
0.9
−55 to 150
Parameter
Symbol
Typical
Maximum Junction-to-Ambient^a
T 10 Sec
40
R_thJA
Steady State
70
Maximum Junction-to-Foot (Drain)
Steady State
R_thJF
18
a: Repetitive Rating: Pulse width limited by the maximum junction temperation.
b: 1-in2 2oz Cu PCB board
Maximum
50
85
22
Unit
V
A
W
O_C
Unit
O_C/W
GUANGDONG HOTTECH INDUSTRIAL CO., LTD.
Page:P5-P1