4410 Datasheet, PDF (1/4 Pages) GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. – N-Channel Enhancement Mode MOSFET

N-Channel Enhancement Mode MOSFET
FEATURES
Advanced Trench Process Technology
High Density Cell Design for Ultra Low On-Resistance
Lead free product is acquired
Surface mount Package
RDS(on) (m-ohm) Max
13.5 @ VGS = 10V ,ID=10A
20 @ VGS = 4.5V,ID=5A
Plastic-Encapsulate Mosfets
4410
N-Channel MOSFET
SOP-8
Pin 1 / 2 / 3: Source
Pin 4: Gate
Pin 5 / 6 / 7 / 8: Drain
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Drain Current @TA=25^oC
ID
IDM
Drain Current (Pulsed) ^a
PD
Total Power Dissipation @TA=25^oC
Tj, Tstg Operating Junction and Storage Temperature Range
R_qJA
Thermal Resistance Junction to Ambient
a: Repetitive Rating: Pulse width limited by the maximum junction temperation.
b: 1-in2 2oz Cu PCB board
Ratings
30
±20
10
50
2.5
-55 to +150
50
Unit
V
V
A
A
W
°C
°C/W
GUANGDONG HOTTECH INDUSTRIAL CO., LTD.
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