4407 Datasheet, PDF (1/4 Pages) GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. – P-Channel Enhancement Mode MOSFET

P-Channel Enhancement Mode MOSFET
FEATURES
•Advanced Trench Process Technology
•High Density Cell Design for Ultra Low On-Resistance
•Lead free product is acquired
Plastic-Encapsulate Mosfets
4407
P-Channel MOSFET
VDS (V) = -30V ID = -12A
RDS(ON) < 11mΩ (VGS = -20V)
RDS(ON) < 13mΩ (VGS = -10V)
RDS(ON) < 38mΩ (VGS = -10V)
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_A=25°C
Current ^A
T =70°C
I
Pulsed Drain Current ^B
I_DM
Avalanche Current ^G
I_AR
Repetitive avalanche energy L=0.3Mh ^G
E_AR
Power Dissipation ^A
T_A=25°C
T_A=70°C
Junction and Storage Temperature Range
P_D
T_J, T_STG
SOP-8
D
Top View
S
D
S
D
S
D
G
DG
S
10 Sec
-12
-10
Steady State
-30
±25
-9.2
-7.4
-60
26
101
3.1
1.7
2.0
1.1
-55 to 150
Unit
V
V
A
mJ
W
°C
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady State
R_θJA
32
60
40
75
Maximum Junction-to-Lead ^C
Steady State
R_θJL
17
24
Unit
°C/W
°C/W
°C/W
GUANGDONG HOTTECH INDUSTRIAL CO., LTD.
Page:P4-P1