4402 Datasheet, PDF (1/4 Pages) GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. – N-Channel Enhancement Mode MOSFET

N-Channel Enhancement Mode MOSFET
FEATURES
•Advanced Trench Process Technology
•High Density Cell Design for Ultra Low On-Resistance
•Lead free product is acquired
Plastic-Encapsulate Mosfets
4402
N-Channel MOSFET
VDS (V) = 30V ID = 12A
RDS(ON) < 14mΩ (VGS = 10V)
RDS(ON) < 16mΩ (VGS = 4.5V)
RDS(ON) < 22mΩ (VGS = 2.5V)
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_A=25°C
Current ^A
T =70°C
I
Pulsed Drain Current ^B
I_DM
Power Dissipation
T_A=25°C
T_A=70°C
Junction and Storage Temperature Range
P_D
T_J, T_STG
SOP-8
D
Top View
S
D
S
D
S
D
G
DG
S
Maximum
Unit
30
V
±12
V
12
10
A
80
3
W
2.1
-55 to 150
°C
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJL
Typ
Max
23
40
48
65
12
16
Unit
°C/W
°C/W
°C/W
GUANGDONG HOTTECH INDUSTRIAL CO., LTD.
Page:P4-P1