2SD965 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency power amplification)

Plastic-Encapsulate Transistors
FEATURES
• Collector current up to 5A
• Collector-Emitter voltage up to 20V
Marking: D965
Maximum Ratings (Ta=25 unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
7
V
Collector Current -Continuous
IC
3
A
Collector Power dissipation
Storage Temperature
PC
0.75
W
Tstg
-55to +150
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V_CBO
I_C=100μA, I_E=0
2SD965 (NPN)
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
Min Typ Max Unit
40
V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain(note)
Current gain bandwidth product
Output Capacitance
V_CEO
V_EBO
I_CBO
I_EBO
V_CE(sat)
h_FE
f_T
C_ob
I_C=1mA ,I_B=0
I_E=10μA, I_C=0
V_CB=10V, I_E=0
V_EB=7V,I_C=0
I_C/I_B=3A/0.1A
V_CE=2V, I_C=1mA
V_CE=2V, I_C=0.5A
V_CE=2V, I_C=0.1A
20
V
7
V
0.1 uA
0.1 uA
1V
200
230
800
150
V_CE=6V,I_C=50mA
150
MHz
V_CB=20V, f=1MHz ,I_E=0A
50 pF
CLASSIFICATION OF hFE
Rank
Range
Q
230 -380
R
340-600
S
560-800
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