2SD874A Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic Encapsulated Transistor

Plastic-Encapsulate Transistors
FEATURES
• Large collector power dissipation PC
• Low collector-emitter saturation voltage VCE(sat)
• Complementary to 2SB766A
Maximum Ratings (Ta=25 unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
5
V
Collector Current -Continuous
IC
1
A
Collector Power dissipation
Storage Temperature
PC
0.5
W
Tstg
-55to +150
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=10μA,IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC=2mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=10μA,IC=0
Collector cut-off current
ICBO
VCB=20V,IE=0
Emitter cut-off current
IEBO
VEB=4V,IC=0
DC current gain
hFE(1)
hFE(2)
VCE=10V,IC=500mA
VCE=5V,IC=1A
Collector-emitter saturation voltage
VCE(sat) IC=500mA,IB=50mA
Base-emitter saturation voltage
VBE(sat) IC=500mA,IB=50mA
Transition frequency
fT
VCE=10V,IC=50mA,f=200MHz
Collector output capacitance
Cob
VCB=10V,IE=0,f=1MHz
2SD874A (NPN)
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
Min Typ Max Unit
60
V
50
V
5
V
0.1
μA
0.1
μA
85
340
50
0.4
V
1.2
V
200
MHz
20
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
Q
85-170
YQ
R
120-240
YR
S
170-340
YS
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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