2SD2413 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planer type(For low-frequency output amplification)

Plastic-Encapsulate Transistors
FEATURES
• High collector to base voltage VCBO
•High collector to emitter voltage VCEO
•Large collector power dissipation PC
•Low collector to emitter saturation voltage VCE(sat)
Marking: 1S
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
400
VCEO
400
VEBO
5
IC
100
PC
0.5
TJ
150
Tstg
-55to +150
Unit
V
V
V
mA
W
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
VCBO
IC=100μA, IE=0
Collector-emitter breakdown voltage
VCEO
IC=0.5mA, IB=0
Emitter-base breakdown voltage
VEBO
IE=100μA, IC=0
Collector cut-off current
ICBO
VCB=400V, IE=0
Emitter cut-off current
IEBO
VEB=5V, IC=0
DC current gain
hFE
VCE=5V, IC=30mA
Collector-emitter saturation voltage
VCE(sat) IC=50mA, IB=5mA
Base-emitter saturation voltage
VBE(sat) IC=50mA, IB=5mA
Transition frequency
fT
VCE=30V, IC=20mA, f=200MHz
Collector output capacitance
Cob
VCB = 30V, IE=0, f=1MHz
2SD2413 (NPN)
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
Min Typ Max Unit
400
V
400
V
5
V
50
μA
50
μA
30
1.5
V
1.5
V
40
MHz
7
pF
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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