2SD2150 Datasheet, PDF (1/2 Pages) Rohm – Low Frequency Transistor(20V, 3A)

Plastic-Encapsulate Transistors
FEATURES
Excellent current-to-gain characteristics
Low collector saturation voltage VCE(sat)
VCE(sat)=0.5V(max) for IC/IB=2A/0.1A
2SD2150(NPN)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
V_CBO
40
V
V_CEO
20
V
V_EBO
6
V
I_C
2000
mA
P_C
500
mW
Junction Temperature
TJ
150
Storage Temperature
Tstg
-55-150
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
VCBO
IC =50uA, IE=0
40
V
Collector-emitter breakdown voltage
VCEO
IC =1mA, IB=0
20
V
Emitter-base breakdown voltage
VEBO
IE=50μA, IC=0
6
V
Collector cut-off current
ICBO
VCB=30V, IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=5V, IC=0
0.1
μA
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
*Pulse test: t_p≤300μS, δ≤0.02.
CLASSIFICATION OF HFE
Marking
CFR
hFE *
VCE=2V, IC=100mA
180
VCE(sat) ^*
IC=2A, IB=100mA
560
0.5
V
VCE=2V,IC=500mA
fT*
f=100MHz
290
MHz
Cob
VCB=10V, IE=0, f=1MHz
25
pF
CFS
Range
180-390
270-560
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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