2SD1766 Datasheet, PDF (1/2 Pages) Rohm – Medium Power Transistor (32V, 2A)

Plastic-Encapsulate Transistors
FEATURES
• Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A)
• Complements to 2SB1188
Maximum Ratings (Ta=25 unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
32
V
Emitter-Base Voltage
VEBO
5
V
Collector Current -Continuous
IC
2
A
Collector Power dissipation
Junction Temperature
Storage Temperature
PC
0.5
W
TJ
150
Tstg
-55to +150
ELECTRICAL CHARACTERISTICS ( @ Ta=25
Parameter
Symbol
unless otherwise specified)
Test conditions
Collector-base breakdown voltage
VCBO
IC=50μA, IE=0
Collector-emitter breakdown voltage
VCEO
IC=1mA, IB=0
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
VEBO
ICBO
IEBO
IE=50μA, IC=0
VCB=20V, IE=0
VEB=4V, IC=0
DC current gain
hFE(1) VCE=3V, IC=500mA
Collector-emitter saturation voltage
VCE(sat) IC=2A, IB=0.2A
Transition frequency
fT
VCE=5V, IC=50mA, f=100MHz
Collector output capacitance
Cob VCB=10V, IE=0, f=1MHz
2SD1766 (NPN)
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
Min Typ Max Uni
40
V
32
V
5
V
1
μA
1
μA
82
390
0.8
V
100
MHz
30
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
P
82-180
DBP
Q
120-270
DBQ
R
180-390
DBR
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