2SD1664 Datasheet, PDF (1/2 Pages) Rohm – Medium Power Transistor (32V, 1A)

Plastic-Encapsulate Transistors
FEATURES
• Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA)
• Complements to 2SB1132
Maximum Ratings (Ta=25 unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
32
V
Emitter-Base Voltage
VEBO
5
V
Collector Current -Continuous
IC
1
A
Collector Power dissipation
Junction Temperature
Storage Temperature
PC
0.5
W
TJ
150
Tstg
-55to +150
ELECTRICAL CHARACTERISTICS ( @ Ta=25
Parameter
Symbol
unless otherwise specified)
Test conditions
Collector-base breakdown voltage
VCBO
IC=50μA, IE=0
Collector-emitter breakdown voltage
VCEO
IC=1mA, IB=0
Emitter-base breakdown voltage
VEBO
IE=50μA, IC =0
Collector cut-off current
ICBO
VCB=20V, IE=0
Emitter cut-off current
IEBO
VEB=4V, IC=0
DC current gain
hFE
VCE=3V, IC=100mA
Collector-emitter saturation voltage
VCE(sat) IC=0.5A, IB=50mA
Transition frequency
fT
VCE=5V, IC=50mA, f=100MHz
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
2SD1664 (NPN)
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
Min Typ Max Unit
40
V
32
V
5
V
0.5
μA
0.5
μA
82
390
0.4
V
150
MHz
15
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
P
82-180
DAP
Q
120-270
DAQ
R
180-390
DAR
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