2SD1119 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency power amplification0

Plastic-Encapsulate Transistors
FEATURES
• Low collector-emitter saturation voltage VCE(sat)
• Satisfactory operation performances at high efficiency
with the low voltage power supply.
Maximum Ratings (Ta=25 unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
7
V
Collector Current -Continuous
IC
3
A
Collector Power dissipation
Storage Temperature
PC
0.75
W
Tstg
-55to +150
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
VCBO
IC =100μA, IE=0
Collector-emitter breakdown voltage
VCEO
IC =1mA, IB=0
Emitter-base breakdown voltage
VEBO
IE=10μA, IC=0
Collector cut-off current
ICBO
VCB=10V, IE=0
Emitter cut-off current
IEBO
VEB=6V, IC=0
DC current gain
hFE(1)
hFE(2)
VCE=2V, IC=500mA
VCE=2V, IC=2A
Collector-emitter saturation voltage
VCE(sat) IC=3A, IB=0.1A
Transition frequency
fT
VCE=6V, IC=50mA, f=200MHz
Collector output capacitance
Cob
VCB=20V, f=1MHz
CLASSIFICATION OF hFE
Rank
Range
Marking
Q
230-380
TQ
2SD1119 (NPN)
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
Min Typ Max Unit
40
V
25
V
7
V
0.1
μA
0.1
μA
230
600
150
1
V
150
MHz
50
pF
R
340-600
TR
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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