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| 2SD1005 Datasheet, PDF (1/2 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD | |||
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Plastic-Encapsulate Transistors
FEATURES
⢠High Collector to Base Voltage.
⢠Excellent DC Current Gain Linearity.
⢠Complements to PNP type 2SB804.
Maximum Ratings (Ta=25 unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
80
V
Emitter-Base Voltage
VEBO
5
V
Collector Current -Continuous
IC
1
A
Collector Power dissipation
Storage Temperature
PC
0.75
W
Tstg
-55to +150
2SD1005 (NPN)
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Collector cut-off current
ICBO
VCB=100V, IE=0
0.1
uA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.1
uA
Collector-emitter
saturation voltage
VCE(sat)
IC/IB=500mA/50mA
0.15
0.5 V
Base-emitter saturation voltage
VBE(sat)
IC/IB=500mA/50mA
0.9
1.5 V
Base-emitter voltage
VBE
VCE=10V,IC=10mA
0.6
0.63
0.7 V
DC current gain(note)
hFE
VCE=2V, IC=1mA
90
200 400
Current gain bandwidth product
fT
VCE=5V,IE=10mA
160
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz ,IE=0A
12
pF
CLASSIFICATION OF hFE
Range
Marking
230-380
BW
340-600
BV
560-800
BU
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P2-P1
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