2SC4672 Datasheet, PDF (1/2 Pages) Rohm – Low Frequency Transistor (50V, 2A)

Plastic-Encapsulate Transistors
FEATURES
• Low saturation voltage, typically VCE (sat) =0.1V at
IC/IB =1A /50mA.
• Excellent DC current gain characteristics.
• Complements the 2SA1797.
2SC4672 (NPN)
Maximum Ratings (Ta=25 unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
6
V
Collector Current -Continuous
IC
2
A
Collector Power dissipation
Storage Temperature
PC
0.5
W
Tstg
-55to +150
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
VCBO
IC=50μA,IE=0
Collector-emitter breakdown voltage
VCEO
IC=1mA,IB=0
Emitter-base breakdown voltage
VEBO
IE=50μA,IC=0
Collector cut-off current
ICBO
VCB=60V,IE=0
Emitter cut-off current
IEBO
VEB=5V,IC=0
DC current gain
hFE
VCE=2V,IC=0.5A
Collector-emitter saturation voltage
VCE(sat) IC=1A,IB=50mA
Transition frequency
fT
VCE=2V,IC=500mA,f=100MHz
Collector output capacitance
Cob
VCB=10V,IE=0,f=1MHz
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
Min Typ Max Unit
60
V
50
V
6
V
0.1 μA
0.1 μA
82
270
0.35 V
210
MHz
25
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
P
80-180
KDP
Q
120-270
DKQ
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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