2SC4548 Datasheet, PDF (1/2 Pages) Unisonic Technologies – HIGH VOLTAGE DRIVER APPLICATION

Plastic-Encapsulate Transistors
FEATURES
• High breakdown voltage.
• Adoption of MBIT process.
• Excellent hFE linearlity.
2SC4548 (NPN)
Marking: CN
Maximum Ratings (Ta=25 unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
400
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
5
V
Collector Current -Continuous
IC
0.2
A
Collector Power dissipation
Storage Temperature
PC
1.3
W
Tstg
-55to +150
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
Collector- emitter breakdown voltage
Emitter- base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Base-emitter saturation voltage
VCBO
VCEO
VEBO
ICBO
IEBO
hFE
VBE(sat)
IC=10uA,IE=0
IC=10mA,IB=0
IE=10uA,IC=0
VCB=300V,IE=0
VEB=4V,IC=0
VCE=10V,IC=50mA
IC=50mA,IB=5mA
Collector-emitter saturation voltage
VCE(sat)
IC=50mA,IB=5mA
Transition frequency
fT
VCE=30V, IC=10mA
Output capacitance
Reverse Transfer Capacitance
Turn-ON Time
Turn-OFF Time
Cob
VCB=30V,IE=0,f=1MHz
Cre
VCB=30V,IE=0,f=1MHz
ton
VCC=150V,IC=50mA,
toff
I_B1=I_B2=5mA
Min Typ Max Unit
400
400
5
60
0.8
70
V
V
V
0.1
μA
0.1
μA
200
1
V
V
MHz
4
pF
3
pF
0.25
uS
5
uS
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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