2SC4115 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – Low Frequency Transistor

Plastic-Encapsulate Transistors
FEATURES
• Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A)
• Excellent current gain characteristics.
• Complements to 2SA1585
2SC4115 (NPN)
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
40
VCEO
20
VEBO
6
IC
3
PC
0.5
TJ
150
Tstg
-55to +150
Unit
V
V
V
A
W
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
VCBO
IC= 50μA, IE=0
40
V
Collector-emitter breakdown voltage
VCEO
IC=1mA , IB=0
20
V
Emitter-base breakdown voltage
VEBO
IE=50μA, IC=0
6
V
Collector cut-off current
ICBO
VCB=30V, IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB= 5V, IC=0
0.1
μA
DC current gain
hFE
VCE=2V, IC= 0.1A
120
560
Collector-emitter saturation voltage*
Transition frequency
VCEsat
fT
IC= 2A, IB=0.1A
VCE=2V, IC=0.5 A
F=100MHz
200
290
0.5
V
MHz
CLASSIFICATION OF hFE
Rank
Range
Marking
Q
120-270
4115Q
R
180-390
4115R
S
270-560
4115S
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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