2SC3650 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – High-hFE, Low-Frequency General-Purpose Amp Applications

Plastic-Encapsulate Transistors
FEATURES
• High DC current gain.
•Low collector-to-emitter saturation voltage.
•Large current capacity.
•Very small size making it easy to provide
high- Density,small-sized hybrid IC S
Marking: CF
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
30
VCEO
25
VEBO
15
IC
1.2
PC
0.5
TJ
150
Tstg
-55to +150
Unit
V
V
V
A
W
2SC3650 (NPN)
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
ELECTRICAL CHARACTERISTICS ( @ Ta=25
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
V_CBO
V_CEO
V_EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
Transition frequency
f_T
Collector output capacitance
C_ob
unless otherwise specified)
Test conditions
I_C=10uA,I_E=0
I_C=1mA,I_B=0
I_E=10uA,I_C=0
V_CB=20V,I_E=0
V_EB=10V,I_C=0
V_CE=5V,I_C=500mA
I_C=0.5A, I_B=0.01A
I_C=0.5A, I_B=0.01A
V_CE=10V,I_c=50mA
V_CB=10V,I_E=0,f=1MHz
Min _{Typ Max Unit}
30
V
25
V
15
V
0.1 μA
0.1 μA
800 1500 3200
0.12 0.5 V
0.85 1.2 V
220
MHz
17
pF
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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