2SC2884 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS)

Plastic-Encapsulate Transistors
FEATURES
• Suitable for output stage of 3 watts amplifier.
• High DC current gain.
• Small flat package.
• P_C=1.0 to 2.0W.
• Complements the 2SA1204.
2SC2884 (NPN)
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
35
VCEO
30
VEBO
5
IC
0.8
PC
0.5
TJ
150
Tstg
-55to +150
Unit
V
V
V
A
W
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Parameter
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V_CEO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE
f_T
C_ob
Test conditions
I_C=10mA,I_B=0
V_CB=35V,I_E=0
V_EB=5V,I_C=0
V_CE=1V,I_C=100mA
I_C=0.5A, I_B=0.02A
V_CE=1V, I_C=10mA
V_CE=5V,I_c=10mA
V_CB=10V,I_E=0,f=1MHz
CLASSIFICATION OF hFE
Rank
Range
Marking
O
100-200
PO1
Min Typ Max Unit
35
V
0.1 μA
0.1 μA
100
320
0.5 V
0.5
0.8 V
120
MHz
13
pF
Y
160-320
PY1
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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