2SC2881 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

Plastic-Encapsulate Transistors
FEATURES
• High voltage:VCEO=120V
• High transition frequency;fT=120MHz.
• PC=500mW.
• Complements the 2SA1201.
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
120
VCEO
120
VEBO
5
IC
0.8
PC
0.5
TJ
150
Tstg
-55to +150
Unit
V
V
V
A
W
2SC2881 (NPN)
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
ELECTRICAL CHARACTERISTICS ( @ Ta=25
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
V_CBO
V_CEO
V_EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE
Transition frequency
f_T
Collector output capacitance
Cob
unless otherwise specified)
Test conditions
I_C=1mA,I_E=0
I_C=10mA,I_B=0
I_E=1mA,I_C=0
V_CB=120V,I_E=0
V_EB=5V,I_C=0
V_CE=5V,I_C=100mA
I_C=500mA, I_B=50mA
V_CE=5V, I_B=500mA
V_CE=5V,Ic=100mA
V_CB=10V,I_E=0,f=1MHz
CLASSIFICATION OF hFE
Rank
Range
Marking
O
80-160
CO1
Min _{Typ Max Unit}
120
V
120
V
5
V
0.1
μA
0.1
μA
80
240
1
V
1
V
120
MHz
30
pF
Y
120-240
CY1
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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