2SC2873 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Plastic-Encapsulate Transistors
FEATURES
• Small flat package.
• Low saturation voltage VCE(sat)=-0.5V
• High speed switching time
• PC=1.0 to 2.0W
• Complementary to 2SA1213
Maximum Ratings (Ta=25 unless otherwise noted)
Parameter
Symbol
Value
Collector-Base Voltage
VCBO
50
Collector-Emitter Voltage
VCEO
50
Emitter-Base Voltage
VEBO
5
Collector Current -Continuous
IC
2
Collector Power dissipation
0.5
PC
1 ⁽¹⁾
Junction Temperature
TJ
150
Storage Temperature
Tstg
-55to +150
Note (1):Mounted on a ceramic substrate(250mm2*0.8t)
Unit
V
V
V
A
W
2SC2873 (NPN)
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Min _{Typ Max Unit}
Collector-emitter breakdown voltage
VCEO
IC=10mA, IB=0
50
Collector cut-off current
ICBO
VCB=50V,IE=0
Emitter cut-off current
IEBO
VEB=5V,IC=0
DC current gain
hFE
VCE=2V,IC=500mA
70
Collector-emitter saturation voltage
VCE(sat) ^{IC=1A, IB=50mA}
Base-emitter saturation voltage
VBE(sat) ^{IC=1A, IB=50mA}
V
0.1
μA
0.1
μA
240
0.5
V
1.2
mV
Transition frequency
fT
VCE=2V,Ic=0.5A
120
MHz
Collector output capacitance
Cob
VCB=10V,IE=0,f=1MHz
30
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
O
70-140
MO
Y
120-240
MY
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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