2SC2712 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLFIER APPLICATIONS)

Plastic-Encapsulate Transistors
FEATURES
Low Noise: NF=1 dB (Typ),10dB(MAX)
Complementary to 2SA1162
2SC2712 ^(NPN)
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
V_CBO
60
V_CEO
50
V_EBO
5
I_C
150
PC
200
T_J
150
Tstg
-55 to +150
Unit
V
V
V
mA
mW
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Collector-base breakdown voltage
VCBO IC= 100μA, IE=0
60
V
Collector-emitter breakdown voltage
VCEO IC=1mA , IB=0
50
V
Emitter-base breakdown voltage
VEBO IE= 100μA, IC=0
5
V
Collector cut-off current
Emitter cut-off current
DC current gain
ICB
VCB= 60 V, IE=0
O
IEB
VEB=5V, IC=0
O
hFE
VCE=6V, IC=2mA
70
0.1
μA
0.1
μA
700
Collector-emitter saturation voltage
VCE(sat) IC= 100mA, IB=10mA
0.1
0.25
V
Transition frequency
fT
VCE=10V, IC= 1mA
80
MHz
Output capacitance
Cob
VCB=10V, IE=0,f=1 MHz
2.0
3.5
pF
Noise Figure
CLASSIFICATION OF h_FE
Marking
LO
Range
70-140
NF
VCE=6V,IC=0.1mA,f=1kH
z, Rg=10kΩ
LY
120-240
LG
200-400
1.0
10
dB
LL
350-700
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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