2SC2411 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor

FEATURES
High ICMax.ICMax. = 0.5mA
Low VCE(sat).Optimal for low voltage operation.
Complements the 2SA1036
Plastic-Encapsulate Transistors
2SC2411(NPN)
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
V_CBO
40
V_CEO
32
V_EBO
5
I_C
500
PC
200
T_J
150
Tstg
-55 to +150
Unit
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
VCBO
IC=100μA,IE=0
Collector-emitter breakdown voltage
VCEO
IC=1mA,IB=0
Emitter-base breakdown voltage
VEBO
IE=100μA,IC=0
Collector cut-off current
ICBO VCB=20V,IE=0
Emitter cut-off current
IEBO
VEB=4V,IC=0
DC current gain
hFE
VCE=3V,IC=100mA
Collector-emitter saturation voltage
VCE(sat) IC=500mA,IB=50mA
Transition frequency
fT
VCE=5V,IC=20mA,f=100MHz
Collector output capacitance
Cob VCB=10V,IE=0,f=1MHz
Marking
Range
CP
82-180
CQ
120-270
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
Min Typ Max Unit
40
V
32
V
5
V
1
μA
1
μA
82
390
0.4 V
250
MHz
6.0
pF
CR
180-390
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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