2SC1766 Datasheet, PDF (1/2 Pages) Shenzhen Jin Yu Semiconductor Co., Ltd. – TRANSISTOR(NPN)

Plastic-Encapsulate Transistors
FEATURES
• Small flat package.
• Low saturation voltage VCE(sat)=-0.5V
• High speed switching time
• PC=1.0 to 2.0W
2SC1766 (NPN)
z High saturation current capability
Maximum Ratings (Ta=25 unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
5
V
Collector Current -Continuous
IC
2
A
Peak Base Current
IBM
0.4
A
Collector Power dissipation
Storage Temperature
PC
1
W
Tstg
-55to +150
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
ELECTRICAL CHARACTERISTICS ( @ Ta=25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
Transition frequency
f_T
Collector output capacitance
C_ob
unless otherwise specified)
Test conditions
V_CB=50V,I_E=0
V_EB=5V,I_C=0
V_CE=2V,I_C=500mA
I_C=1A, I_B=50mA
I_C=1A, I_B=50mA
V_CE=2V,I_c=0.5A
f=100MHz
V_CB=10V,I_E=0,f=1MHz
Min _{Typ Max Unit}
0.1 μA
0.1 μA
70
240
0.5 V
1.2 mV
120
MHz
40
pF
CLASSIFICATION OF h_FE
Rank
Range
Marking
P
82-180
P1766
Q
120-270
Q1766
Y
180-390
Y1766
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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