2SB1440 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-frequency output amplification)

Plastic-Encapsulate Transistors
FEATURES
• Low collector-emitter saturation voltage VCE(sat).
• Mini Power type package,allowing downsizing
of the equipment and automatic insertion through
the tape packing and the magazine packing.
•Complementary the 2SD2185.
2SB1440 (PNP)
Marking: 1L
Maximum Ratings (Ta=25 unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current -Continuous
IC
-2
A
Collector Power dissipation
Storage Temperature
PC
1
W
Tstg
-55to +150
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V_CBO
I_C=-10μA I_E=0
Collector-emitter breakdown voltage
V_CEO
I_C=-1mA I_B=0
Emitter-base breakdown voltage
V_EBO
I_E=-10μA I_C=0
Collector cut-off current
I_CBO
V_CB=-20V I_E=0
DC current gain
h_FE
V_CE=-2V I_C=-1A
Collector-emitter saturation voltage
V_CE(sat)
I_C=-1A I_B=-50mA
Min ^Typ Max Unti
-50
V
-50
V
-5
V
-0.1 μA
120
340
-0.2 -0.3 V
Base-emitter saturation voltage
V_BE(sat)
I_C=-1A I_B=-50mA
-0.85 -1.2 V
Transition frequency
Output Capacitance
f_T
V_CE=-10V,I_C=-50mA,
f=200MHz
C_obo
V_CB=-10V f=1.0MHz I_E=0
150
MHz
45 60 pF
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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