2SB1386 Datasheet, PDF (1/2 Pages) Rohm – Low Frequency Transistor(-20V,-5A)

Plastic-Encapsulate Transistors
FEATURES
• Low collector saturation voltage,
• Execllent current-to-gain characteristics
2SB1386 (PNP)
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
-30
VCEO
-20
VEBO
-6
IC
-5
PC
0.5
TJ
150
Tstg
-55to +150
Unit
V
V
V
A
W
ELECTRICAL CHARACTERISTICS ( @ Ta=25
Parameter
Symbol
unless otherwise specified)
Test conditions
Collector-base breakdown voltage
VCBO
IC=-50μA,IE=0
Collector-emitter breakdown voltage
VCEO
IC=-1mA,IB=0
Emitter-base breakdown voltage
VEBO
IE=-50μA,IC=0
Collector cut-off current
ICBO VCB=-20V,IE=0
Emitter cut-off current
IEBO VEB=-5V,IC=0
DC current gain
hFE VCE=-2V,IC=-500mA
Collector-emitter saturation voltage
VCE(sat) IC=-4A,IB=-100mA
Transition frequency
fT
VCE=-6V,IC=-50mA,f=30MHz
Collector output capacitance
Cob VCB=-20V,IE=0,f=1MHz
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
Min Typ Max Unit
-30
V
-20
V
-6
V
-0.5
μA
-0.5
μA
82
390
-1
V
120
MHz
60
pF
CLASSIFICATION OF h_FE
Rank
Range
Marking
P
82-180
BHP
Q
120-270
BHQ
R
180-390
BHR
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