2SB1260 Datasheet, PDF (1/2 Pages) Rohm – Power Transistor

Plastic-Encapsulate Transistors
FEATURES
• High breakdown voltage and high current. BVCEO=-80V,IC=-1A
• Good hFEVLinearity.
• Low VCE(sat).
• Complements the 2SD1898.
2SB1260(PNP)
Marking: ZL
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
-80
VCEO
-80
VEBO
-5
IC
1
PC
500
TJ
150
Tstg
-55to +150
Unit
V
V
V
A
mW
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
ELECTRICAL CHARACTERISTICS ( @ Ta=25
Parameter
Symbol
Collector-base breakdown voltage
V_CBO
unless otherwise specified)
Test conditions
I_C=-50μA I_E=0
Min ^Typ
-80
Max Unit
V
Collector-emitter breakdown voltage V_CEO
I_C=-1mA I_B=0
-80
V
Emitter-base breakdown voltage
V_EBO
I_E=-50μA I_C=0
-5
Collector cut-off current
I_CBO
V_CB=-60V I_E=0
Emitter cut-off current
I_EBO
V_EB=-4V,I_C=0
V
-1
μA
-1
μA
DC current gain
h_FE
V_CE=-3V I_C=-100μA
82
390
Collector-emitter saturation voltage
V_CE(sat)
Transition frequency
f_T
Output Capacitance
C_obo
I_C=-500mA I_B=-50mA
V_CE=-5V,I_C=-50mA,
f=30MHz
V_CB=-10V f=1.0MHz
I_E=0 -
-0.4 V
100
MHz
25
pF
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