2SB1188 Datasheet, PDF (1/2 Pages) Rohm – Medium power Transistor(-32V, -2A)

Plastic-Encapsulate Transistors
FEATURES
• Low VCE(sat).
• Complements the 2SD1766
2SB1188(PNP)
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
-40
VCEO
-32
VEBO
-5
IC
2
PC
500
TJ
150
Tstg
-55to +150
Unit
V
V
V
A
mW
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
VCBO
IC=-50μA , IE=0
Collector-emitter breakdown voltage
VCEO
IC= -1mA , IB=0
Emitter-base breakdown voltage
VEBO
IE=-50μA, IC=0
Collector cut-off current
ICBO
VCB=-20 V , IE=0
Emitter cut-off current
IEBO
VEB=-4 V , IC=0
DC current gain *
hFE
VCE=-3V, IC= -0.5A
Collector-emitter saturation voltage *
Transition frequency
Output capacitance
VCE(sat)
fT
C_ob
IC=-2A, IB= -0.2A
VCE=-5V, IC=-0.5A ,f=30MHz
VCB=-10V, IE=0 ,f=1MHz
Min Typ Max Unit
-40
V
-32
V
-5
V
-1
μA
-1
μA
82
390
-0.8
V
100
MHz
50
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
P
80-180
BCP
Q
120-270
BCQ
R
180-390
BCR
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