2SB1119 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – LF Amp,Electronic Governor Applications

Plastic-Encapsulate Transistors
FEATURES
• Very small size making it easy to provide
,
• High-density,small-size hybrid IC S
Marking: BB
Maximum Ratings (Ta=25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector current (pulse) *
Total power dissipation
Junction temperature
Storage temperature range
unless otherwise noted)
Symbol
Rating
Unit
VCBO
VCEO
VEBO
IC
IC
PT
-25
V
-25
V
-5
V
-1
A
-2
A
0.5
W
Tj
150
Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS ( @ Ta=25
Parameter
Symbol
unless otherwise specified)
Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
V_CBO
V_CEO
V_EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
fT
Cob
I_C=-10μA I_E=0
I_C=-1mA I_B=0
I_E=-10μA I_C=0
V_CB=-20V I_E=0
V_EB=-4V,I_C=0
V_CE=-2V I_C=-50mA
V_CE=-2V I_C=-1A
I_C=-500mA I_B=-50mA
I_C=-500mA I_B=-50mA
V_CE=-10V,I_C=-50mA,
V_CB=-10V f=1.0MHz IE=0
2SB1119 (PNP)
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
Min
Typ _{Max Unit}
-25
V
-25
V
-5
V
-0.1 μA
-0.1 μA
100
560
40
-0.1 -0.3
-0.85 -1.2
180
15
V
V
MHz
pF
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