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| 2SA950 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO POWER AMPLIFIER APPLICATIONS) | |||
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Plastic-Encapsulate Transistors
2SA950 TRANSISTOR (PNP)
FEATURES
y 1W output applications
y complementary to 2SC2120
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
-35
VCEO
Collector-Emitter Voltage
-30
VEBO
Emitter-Base Voltage
-5
IC
Collector Current -Continuous
-0.8
PC
Collector Power Dissipation
0.6
Tj
Junction Temperature
150
Tstg
Storage Temperature
-55 to +150
Units
V
V
V
A
W
â
â
TO-92
1.EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
123
Parameter
Symbol
Test conditions
MIN
TYP
MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC= -0.1mA , IE=0
-35
V
Collector-emitter breakdown voltage
V(BR)CEO IC= -10mA , IB=0
-30
V
Emitter-base breakdown voltage
V(BR)EBO IE= -0.1mA, IC=0
-5
V
Collector cut-off current
ICBO
VCB= -35V, IE=0
-0.1
μA
Emitter cut-off current
IEBO
VEB= -5V, IC=0
-0.1
μA
DC current gain
hFE(1)
VCE=-1V, IC=-100mA
100
320
hFE(2)
VCE=-1V, IC= -700mA
35
Collector-emitter saturation voltage
VCE(sat)
IC= -500mA, IB= -20mA
-0.7
V
Emitter-base voltage
VBE
VCE=-1V, IC=-10mA
-0.5
-0.8
V
Collector Output Capacitance
VCB=-10V,IE=0
Cob
f=1MHz
19
pF
Transition frequency
CLASSIFICATION OF hFE(1)
Rank
Range
fT
O
100-200
VCE=-5V,IC=-10mA
120
Y
160-320
MHz
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P2-P1
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