2SA812 Datasheet, PDF (1/2 Pages) NEC – AUDIO FREQUENCY,GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD

Plastic-Encapsulate Transistors
FEATURES
Complementary to 2SC1623
High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA)
High Voltage: Vceo=-50V
2SA812(PNP)
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
V_CBO
-60
V_CEO
-50
V_EBO
-5
I_C
-100
PC
200
T_J
150
Tstg
-55 to +150
Unit
V
V
V
mA
mW
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
VCBO IC=-100μA, IE=0
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
VCEO
VEBO
IC= -1mA, IB=0
IE= -100μA, IC=0
Collector cut-off current
ICBO
VCB=- 60 V, IE=0
Emitter cut-off current
IEBO
VEB= -5V, IC=0
DC current gain
hFE
VCE=- 6V, IC= -1mA
Collector-emitter saturation voltage
VCE(sat) IC=-100mA, IB= -10mA
Base-emitter voltage
Transition frequency
VBE
IC=-1mA, VCE=-6V
fT
VCE=-6V, IC= -10mA
Collector output capacitance
Cob
VCB=-10V,IE=0,f=1MHz
Min
-60
-50
-5
90
-0.58
CLASSIFICATION OF h_FE
Marking
M4
Range
90-180
M5
135-270
M6
200-400
Typ Max Unit
V
V
V
-0.1 μA
-0.1 μA
600
-0.3
V
-0.68 V
180
MHz
4.5
pF
M7
300-600
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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