2SA1797 Datasheet, PDF (1/2 Pages) Rohm – Power Transistor (-50V, -3A)

Plastic-Encapsulate Transistors
FEATURES
• Low saturation voltage
• Excellent DC current gain characteristics
• Complements to 2SC4672
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
-50
VCEO
-50
VEBO
-6
IC
-2
PC
0.5
TJ
150
Tstg
-55to +150
Unit
V
V
V
A
W
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
VCBO
IC=-50μA, IE=0
Collector-emitter breakdown voltage
VCEO
IC=-1mA, IB=0
Emitter-base breakdown voltage
VEBO
IE=-50μA, IC=0
Collector cut-off current
ICBO VCB=-50V, IE=0
Emitter cut-off current
IEBO
VEB=-5V, IC=0
DC current gain
hFE
VCE=-2V, IC=-500mA
Collector-emitter saturation voltage
VCE(sat) IC=-1A, IB=-50mA
Transition frequency
fT
VCE=-2V, IC=-0.5A, f=100MHz
Collector output capacitance
Cob VCB=-10V, IE=0, f=1MHz
2SA1797 (PNP)
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
Min Typ Max Unit
-50
V
-50
V
-6
V
-0.1 μA
-0.1 μA
82
270
-0.35
V
200
MHz
36
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
P
80-180
AGP
Q
120-270
AGQ
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