2SA1740 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – High-Voltage Driver Applications

Plastic-Encapsulate Transistors
FEATURES
• High breadown voltage
• Excellent hFE linearlity
2SA1740 (PNP)
Marking: AK
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
-400
VCEO
-400
VEBO
-5
IC
-200
PC
500
TJ
150
Tstg
-55to +150
Unit
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
VCBO
IC=-10μA,IE=0
Collector-emitter breakdown voltage
VCEO
IC=-1mA,IB=0
Emitter-base breakdown voltage
VEBO
IE=-10μA,IC=0
Collector cut-off current
ICBO VCB=-300V,IE=0
Emitter cut-off current
IEBO
VEB=-4V,IC=0
DC current gain
hFE
VCE=-10V,IC=-50mA
Collector-emitter saturation voltage
VCE(sat) IC=-50mA,IB=-5mA
Base-emitter saturation voltage
VBE(sat) IC=-50mA,IB=-5mA
Transition frequency
fT
VCE=-30V,IC=-10mA
Collector output capacitance
Cob VCB=-30V,IE=0,f=1MHz
Turn-ON Time
Turn-OFF Time
ton
VCC=-150V,Ic=-50mA,
toff
IB1=-IB2=-5mA
CLASSIFICATION OF hFE
Rank
Range
D
60-120
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
Min Typ Max Unit
-400
V
-400
V
-5
V
-100 nA
-100 nA
60
200
-0.6
V
-1
V
70
MHz
5
pF
0.25
μs
5
μs
E
100-200
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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