2SA1662 Datasheet, PDF (1/2 Pages) Shenzhen Jin Yu Semiconductor Co., Ltd. – TRANSISTOR(PNP)

Plastic-Encapsulate Transistors
FEATURES
• Complementary to KTC4374
2SA1662 (PNP)
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
-80
VCEO
-80
VEBO
-5
IC
-400
PC
500
TJ
150
Tstg
-55to +150
Unit
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
VCBO
IC=-1mA,IE=0
Collector-emitter breakdown voltage
VCEO
IC=-10mA,IB=0
Emitter-base breakdown voltage
VEBO
IE=-1mA,IC=0
Collector cut-off current
ICBO VCB=-80V,IE=0
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
IEBO
hFE(1)
hFE(2)
VCE(sat)
VEB=-5V,IC=0
VCE=-2V,IC=-50mA
VCE=-2V,IC=-200mA
IC=-200mA,IB=-20mA
Base-emitter voltage
VBE VCE=-2V,IC=-5mA
Transition frequency
fT
VCE=-10V,IC=-10mA
Collector output capacitance
Cob VCB=-10V,IE=0,f=1MHz
CLASSIFICATION OF hFE
Rank
Range
Marking
O
70-140
FO
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
Min Typ Max Unit
-80
V
-80
V
-5
V
-0.1
μA
-0.1
μA
70
240
40
-0.4
V
-0.55
-0.8
V
120
MHz
14
pF
Y
120-240
FY
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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