2SA1204 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS)

Plastic-Encapsulate Transistors
FEATURES
• Suitable for output stage of3 watts Amplifier
• Suitable flat package
• High DC current gain
• PC=1.0 to 2.0W(mounted on ceramic substrate)
• Complementary to 2SC2884
2SA1204 (PNP)
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
-35
VCEO
-35
VEBO
-5
IC
-800
PC
500
1000 (note)
TJ
150
Tstg
-55to +150
Unit
V
V
V
mA
mW
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
ELECTRICAL CHARACTERISTICS ( @ Ta=25
Parameter
Symbol
unless otherwise specified)
Test conditions
Min
Collector-emitter breakdown voltage
Collectorcut-off current
Emittercut-offcurrent
DC currentgain
Collector-emitter saturation voltage
Base-emitter
V_CEO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE
I_C=-10mA,I_B=0
-30
V_CB=-35V,I_E=0
V_EB=-5V,I_C=0
V_CE=-1V,I_C=-100mA
100
I_C=-500mA,I_B=-20mA
V_CE=-1V,I_C=-10mA
-0.5
Transition frequency
Collectoroutputcapacitance
f_T
V_CE=-5V,I_C=-10mA
C_ob
V_CB=-10V,I_E=0,f=1MHz
Typ Max Unit
V
-0.1 μA
-0.1 μA
320
-0.7 V
-0.8 V
120
MHz
19
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
O
100-200
RO
Y
160-320
RY
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