2SA1203 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS)

Plastic-Encapsulate Transistors
FEATURES
• Suitable for output stage of3 watts Amplifier
• Suitable flat package
• PC=1.0 to 2.0W(mounted on ceramic substrate)
• Complementary to 2SC2884
2SA1203 (PNP)
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
-30
VCEO
-30
VEBO
-5
IC
-1500
PC
500
1000 (note)
TJ
150
Tstg
-55to +150
Unit
V
V
V
mA
mW
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
ELECTRICAL CHARACTERISTICS ( @ Ta=25
Parameter
Symbol
Collector-emitter breakdown voltage _VCEO
Emitter-base breakdown voltage
V_EBO
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
I_CBO
I_EBO
h_FE
V_CE(sat)
Base-emitter
V_BE
Transition frequency
f_T
Collector output capacitance
C_ob
unless otherwise specified)
Test conditions
Min
I_C=-10mA,I_B=0
-30
I_E=-1mA,I_C=0
-5
V_CB=-30V,I_E=0
V_EB=-5V,I_C=0
V_CE=-2V,I_C=-500mA
100
I_C=-1.5A,I_B=-0.03A
V_CE=-2V,I_C=-500mA
V_CE=-2V, I_C=-500mA
V_CB=-10V,I_E=0,f=1MHz
Typ Max Unit
V
V
-0.1 μA
-0.1 μA
320
-2
V
-1
120
50
MHz
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
O
100-200
HO1
Y
160-320
HY1
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P2-P1