2SA1179 Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (PNP)

Plastic-Encapsulate Transistors
FEATURES
High breakdown voltage
Marking: M
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
V_CBO
-55
V_CEO
-50
V_EBO
-5
I_C
-150
PC
200
T_J
150
Tstg
-55 to +150
Unit
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
VCBO
IC=-10u A,IE=0
Collector-emitter breakdown voltage
VCEO
IC=-1mA,IB=0
Emitter-base breakdown voltage
VEBO
IE=-10 u A,IC=0
Collector cut-off current
ICBO VCB=-35V,IE=0
Emitter cut-off current
IEBO
VEB=-4V,IC=0
DC current gain
hFE
VCE=-6V,IC=-1mA
Collector-emitter saturation voltage
VCE(sat) IC=-50mA,IB=-5mA
Base -emitter saturation voltage
VBE(sat) IC=-50mA,IB=-5mA
Transition frequency
fT
VCE=-6V,IC=-10mA
Collector output capacitance
Cob
VCB=-6V,IE=0,f=1MHz
2SA1179 (PNP)
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
Min Typ Max Unit
-55
V
-50
V
-5
V
-0.1 u A
-0.1 u A
200
400
-0.5
V
-1.0
V
180
MHz
4
pF
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P2-P1