2SA1162 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

FEATURES
Low noise : NF= 1dB(Typ.),10dB (Max.)
Complementary to 2SC2712.
Small Package.
Plastic-Encapsulate Transistors
2SA1162(PNP)
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
V_CBO
-50
V_CEO
-50
V_EBO
-5
I_C
-150
PC
150
T_J
125
Tstg
-55 to +150
Unit
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
VCBO IC=-100u A,IE=0
Collector-emitter breakdown voltage
VCEO IC=-1mA,IB=0
Emitter-base breakdown voltage
VEBO IE=-100 u A,IC=0
Collector cut-off current
ICBO VCB=-50V,IE=0
Emitter cut-off current
IEBO VEB=-5V,IC=0
DC current gain
hFE
VCE=-6V,IC=-2mA
Collector-emitter saturation voltage
VCE(sat) IC=-100mA,IB=-10mA
Transition frequency
fT
VCE=-10V,IC=-1mA
Collector output capacitance
Cob VCB=-10V,IE=0,f=1MHz
Noise figure
NF
VCE=-6V,Ic=0.1mA,
f=1KHZ,Rg=10KΩ
Rank
Range
SO
70-140
SY
120-240
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
Min Typ Max Unit
-50
V
-50
V
-5
V
-0.1 u A
-0.1 u A
70
400
-0.3
V
80
MHz
7
pF
10
dB
SG
200-400
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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