2SA1036 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor

Plastic-Encapsulate Transistors
FEATURES
Large IC. ICMax.= -500 mA
Low VCE(sat). Ideal for low-voltage operation.
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
V_CBO
-40
V_CEO
-32
V_EBO
-5
I_C
-500
PC
200
T_J
150
Tstg
-55 to +150
Unit
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
VCBO IC=-100μA,IE=0
Collector-emitter breakdown voltage
VCEO IC=-1mA,IB=0
Emitter-base breakdown voltage
VEBO IE=-100μA,IC=0
Collector cut-off current
ICBO VCB=-20V,IE=0
Emitter cut-off current
IEBO
VEB=-4V,IC=0
DC current gain
hFE
VCE=-3V,IC=-10mA
Collector-emitter saturation voltage
VCE(sat) IC=-100mA,IB=-10mA
Transition frequency
fT
VCE=-5V,IC=-20mA,f=100MHz
Collector output capacitance
Cob VCB=-10V,IE=0,f=1MHz
CLASSIFICATION OF h_FE
Marking
Range
HP
82-180
HQ
120-270
2SA1036(PNP)
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
Min Typ Max Unit
-40
V
-32
V
-5
V
-1
μA
-1
μA
82
390
-0.4
V
200
MHz
7
pF
HR
180-390
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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