2N7002W Datasheet, PDF (1/2 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Plastic-Encapsulate Mosfets
Features
2N7002W
· Low On-Resistance
· Low Gate Threshold Voltage
· Low Input Capacitance
· Fast Switching Speed
· Low Input/Output Leakage
· Ultra-Small Surface Mount Package
A
D
TOP VIEW
BC
Mechanical Data
· Case: SOT-323, Molded Plastic
· Terminals: Solderable per MIL-STD-202,
Method 208
· Terminal Connections: See Diagram
· Weight: 0.006 grams (approx.)
G
S
E
D
G
H
K
M
J
L
Maximum Ratings ^{@ TA = 25°C unless otherwise specified}
Characteristic
Drain-Source Voltage
Drain-Gate Voltage R_GS £ 1.0MW
Gate-Source Voltage
Continuous
Pulsed
Drain Current (Note 1)
Continuous
Continuous @ 100°C
Pulsed
Total Power Dissipation (Note 1)
Derating above T_A = 25°C
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
VDSS
V_DGR
V_GSS
ID
P_d
RqJA
Tj, TSTG
2N7002W
60
60
±20
±40
115
73
800
200
1.60
625
-55 to +150
Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
SOT-323
Units
V
V
V
mA
mW
mW/°C
K/W
°C
Characteristic
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Symbol Min Typ Max Unit
Test Condition
BVDSS 60
@ TC = 25°C
@ T_C = 125°C
I_DSS
¾
I_GSS
¾
70
¾
V VGS = 0V, ID = 10mA
¾
1.0
500
µA VDS = 60V, VGS = 0V
¾
±10
nA VGS = ±20V, VDS = 0V
V_GS(th) 1.0
@ Tj = 25°C
@ Tj = 125°C
R_{DS (ON)}
¾
ID(ON)
0.5
g_FS
80
¾
2.0
V VDS = VGS, ID =-250mA
3.2
7.5
4.4 13.5
W
VGS = 5.0V, ID = 0.05A
VGS = 10V, ID = 0.5A
1.0
¾
A VGS = 10V, VDS = 7.5V
¾
¾
mS VDS =10V, ID = 0.2A
C_iss
¾
22
50
pF
C_oss
¾
11
25
pF
V_DS = 25V, V_GS = 0V
f = 1.0MHz
Crss
¾
2.0
5.0
pF
tD(ON)
¾
t_D(OFF)
¾
7.0
20
11
20
ns VDD = 30V, ID = 0.2A,
R_L = 150W, V_GEN = 10V,
ns _{RGEN = 25W}
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width £ 300ms, duty cycle £ 2%.
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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