2N7002 Datasheet, PDF (1/4 Pages) Pan Jit International Inc. – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Plastic-Encapsulate Mosfets
FEATURES
High density cell design for low RDS(ON)
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
2N7002
N-Channel MOSFET
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol
VDS
VDGR
VGS
ID
IDM ⁽¹⁾
PTOT
Rthj- amb
Parameter
Drain-source voltage (VGS_m=_et0)
Drain-gate voltage (RGS =_e2_r0 kΩ)
Gate- source voltage
Drain current (continuous) at TC = 25°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Thermal resistance junction-ambient max
TJ, Tstg Operating junction temperature, Storage temperature
Ratings _Unit
60
V
600
V
±020
V
0.20
A
1800
mA
80.35 W
357.1 ^{(2) °C/W}
- 55 to 150 °C
1.Gate
2.Source
3.Drain
SOT-23
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Symbol
Parameter
Test conditions
Min.
V_{(BR)DSS Drain-source breakdown voltage}
I_D = 250µA, V_GS =0
60
Zero gate voltage
I_DSS
drain current (V_DS = 0)
V_DS = max rating
V_DS = max rating,
T_C=125°C
I_GSS
Gate-body leakage current (V_DS = 0)
V_GS = ± 18V
V_GS(th)
Gate threshold voltage
V_DS = V_GS, I_D = 250µA
1
R_DS(on)
g_fs ⁽³⁾
Static drain-source on resistance
Forward transconductance
V_GS = 10V, I_D = 0.5A
V_GS = 4.5V, I_D = 0.5A
V_DS = 10V _, I_D = 0.5A
C_iss
Input capacitance Output capacitance
V_DS = 25V, f = 1MHz,
C_oss
Reverse transfer
V_GS = 0
C_rss
capacitance
Typ.
2.1
1.8
2
0.6
43
20
6
Max. Unit
V
1
µA
10
µA
±100
nA
2.5
V
5
Ω
5.3
Ω
S
pF
pF
pF
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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