2N5551 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

Plastic-Encapsulate Transistors
FEATURES
for general purpose, high volt
As complementary types the PNP transistors 2N5401 are
recommended.
Low current(max. 600mA),High voltage(max.180V)
2N5551 ^(NPN)
MARKING:2N5551
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
V_CBO
180
V
V_CEO
160
V
V_EBO
6
V
I_C
600
mA
P_C
625
mW
T_J
150
Tstg
-55-150
1. EMITTER
2. BASE
3. COLLECTO
TO-92
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V_CBO
I_C=100μA,I_E=0
180
Collector-emitter breakdown voltage
V_CEO
I_C= 1mA, I_B=0
160
Emitter-base breakdown voltage
V_EBO
I_E= 10μA, I_C=0
6
Collector cut-off current
I_CBO
V_CB= 120V, I_E=0
Emitter cut-off current
I_EBO
V_EB= 4V, I_C=0
DC current gain
h_FE1
V_CE=5V, I_C=1mA
80
h_FE2
V_CE=5V, I_C =10mA
100
Collector-emitter saturation voltage
V_{CE sat}
I_C=10mA, I_B=1mA
I_C=50mA, I_B=5mA
Base-emitter saturation voltage
V_{BE sat}
I_C=10mA, I_B= 1mA
I_C=50mA, I_B= 5mA
Transition frequency
f_T
V_CE=10V,I_C=10mA,f=100MHz
100
Collector output capacitance
C_obo
V_CB=10V,I_E=0,f=1MHz
Input capacitance
C_ib
V_BE=0.5V,I_C=0,f=1MHz
Noise figure
N_F
VCE=5V,Ic=0.25mA,
f=10Hz to 15.7KHz,Rs=1kΩ
CLASSIFICATION OF HFE
Rank
Range
A
100-150
B
150-200
Typ Max Unit
V
V
V
50
nA
50
nA
300
0.15
0.2
V
1
1
V
300 MHz
6
pF
20
pF
8
dB
C
200-300
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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