2N5401 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP high-voltage transistor

Plastic-Encapsulate Transistors
FEATURES
for general purpose, high volt
As complementary types the NPN transistors 2N5551 are
recommended.
Low current(max. 600mA),High voltage(max.160V)
2N5401 (PNP)
MARKING:2N5401
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
V_CBO
-160
V
V_CEO
-150
V
V_EBO
-6
V
I_C
-600
mA
P_C
625
mW
T_J
150
Tstg
-55-150
1. EMITTER
2. COLLECTO
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V_CBO
V_CEO
V_EBO
I_CBO
I_EBO
h_FE(1)
h_FE(2)
h_FE(3)
V_CE(sat)
V_BE(sat)
f_T
I_C= -100μA, I_E=0
-160
I_C= -1mA, I_B=0
-150
I_E= -10μA, I_C=0
-5
V_CB= -120 V, I_E=0
V_EB= -3V, I_C=0
V_CE= -5V, I_C=-1 mA
80
V_CE= -5V, I_C= -10 mA
60
V_CE= -5V, I_C=-50 mA
50
I_C= -50mA, I_B= -5 mA
I_C= -50mA, I_B= -5 mA
V_CE=-5V, I_C=-10mA, f =30MHz 100
V
V
V
-50
nA
-50
nA
300
-0.5
V
-1
V
300
MHz
CLASSIFICATION OF HFE
Rank
Range
A
100-150
B
150-200
C
200-300
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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