1SS196 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

Plastic-Encapsulate Diodes
SWITCHING DIODES
FEATURES
Low forward voltage : VF(3)=0.9V(typ.)
Fast reverse recovery time : trr=1.6ns(typ.)
1SS196
MARKING: G3
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter
Symbol
Limits
Non-Repetitive Peak reverse
V_RM
voDlCtagBelocking _Voltage
V_R
Forward Continuous Current
I_FM
Average Rectified Output
I_O
CPuorrwenert _Dissipation
P_D
Junction temperature
T_J
Storage temperature range
T_STG
85
80
300
100
150
125
-55-125
Unit
V
V
mA
mA
mW
1. N.C.
2. ANODE
3. CATHODE
SOT-23
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Reverse Breakdown Voltage
V _(BR)R
80
V
Forward voltage
Reverse current
Capacitance between terminals
V_F1
0.60
V
V_F2
0.72
V
V_F3
0.90 1.2
V
I_R1
0.1
uA
I_R2
0.5
uA
C_T
0.9
3.0
pF
Reverse recovery time
t _rr
1.6
4.0
ns
Conditions
I_R=100μA
I_F=1mA
I_F=10mA
I_F=100mA
V_R=30V
V_R=80V
V_R=0,f=1MHz
I_F=I_R=10mA,Irr=0.1×I_R
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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