1N4148 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed diodes

Glass-Encapsulate Diodes
FAST SWITCHING DIODES
FEATURES
Silicon epitaxial planar diode
High speed switching diode
500 mW power dissipation
These diodes are also available in glass case DO-34. Mini-MELF
27.5 Min
1N4148
3.9 Max
27.5 Min
MECHANICAL DATA
Weight: 0.004 ounces, 0.13 grams
Case: DO-35, glass case
Polarity: Color band denotes cathode
1.9 Max
0.5 Max
DO-35 Dimensions in millimeters
Absolute Maximum Ratings (TA=25 unless otherwise noted)
Parameter
Symbol
Value
Unit
Reverse voltage
VR
75
v
Peak reverse voltage
VRM
100
v
Average Rectified Current
IO
150
mA
Non-repetitive Peak Forward Current
IFSM
500 ¹⁾
mA
Pow er dissipaton at tamb=25^oC
Ptot
500
mW
Junction temperature
TJ
175
o_C
Storage temperature range
TSTG
-55-175
o_C
1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.
ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter
Symbol
Forward voltage
@ IF=10mA
V_F
Leakage current
at V_R=20V
I_R
at V_R=75V
I_R
at V_R=20V T_J=150^oC
I_R
Capacitance at VF=VR=0V
C_tot
Voltage rise when switching on tested with
V_fr
50mA pulses tp=0,1uS , rise time 30ns, f
p=5 to 100KHz
Reverse recovery time from I_F=10mA
trr
VR=6V,RL=100 ,at IR=1mA
Thermal resistance junction to ambient
R_θJA
Rectification effciency at 100MHz,V_RF=2V
V
unless otherwise specified)
Min.
Typ.
0.45
Max.
1.0
25
5
50
4
2.5
4.0
350
Unit
v
nA
uA
uA
pF
V
nS
K/W
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