HB3613SSMD Datasheet, PDF (3/6 Pages) –

Conditions are as specified elsewhere in these specifications. -40℃ ~ +70℃
Reference temperature
+25℃
2.1 Maximum Rating
DC voltage VDC
12
V
Between any terminals
AC voltage Vpp
10
V
Between any terminals
2.2 Electrical Characteristics
Source impedance
Zs=50Ω
Load impedance
Z_L=2kΩ//3pF
T_A=25℃
Item
Freq
min
typ max
Center frequency
Fo
36.05 36.125 36.20 MHz
Insertion attenuation
Reference level
36.125MHz
18.3
20.3 22.3
dB
B1dB
-
7.5
-
MHz
Pass bandwidth
B3dB
-
8.0
-
MHz
B30dB
-
9.4
-
MHz
32.32MHz
-
1.2
-
dB
39.93MHz -0.4
1.1
2.6
dB
Relative attenuation
32.13MHz
1.6
40.13MHz 1.7
3.1
4.6
dB
3.2
4.7
dB
31.25MHz 35.0
48.0
-
dB
47.25MHz 40.0
52.0
-
dB
25.00~29.50MHz
35.0
41.0
dB
Sidelobe
29.50~31.25MHz
31.0
37.0
dB
40.90~43.50MHz
31.0
37.0
dB
43.50~50.00MHz
35.0
42.0
dB
Reflected wave signal suppression
1.2 us … 6.0 us after main pulse
(test pulse 250 ns ,
42.0
52.0
dB
carrier frequency 36.125 MHz)
Feedthrough signal suppression
1.3 us … 1.2 us before main pulse
(test pulse 250 ns ,
45.0
54.0
dB
carrier frequency 36.125 MHz)
Group delay ripple (p-p)
32.13 ~ 40.13 Mhz
-
50
-
ns
Impedance at 36.125 Mhz
Input: Zin = Rin//Cin
-
-
-
-
-
2.9//14.1 - kΩ//pF
Output: Zin = Rin//Cin
-
2.4//4.4 - _kΩ//pF
Temperature coefficient of frequency
-72
ppm/k
2.3 Environmental Performance Characteristics
Item Test condition
Allowable change of absolute
Level at center frequency(dB)
2