HT0808-17 Datasheet, PDF (1/8 Pages) Hongfa Technology – GaN Hybrid Power Amplifier

GaN Hybrid Power Amplifier HT0808-15A
Product Features
• GaN on SiC HEMT
• 2-Stage Amplifier 50ohms Matching
• Surface Mount Hybrid Type
• Small Size & Mass
• High Efficiency
Applications
• RF Sub-Systems
• Base Station
• Repeater
• 4G/LTE system
• Small cell
Package Type : NP-1EL
Description
The HT0808-15A is designed for LTE Repeater & RF Sub-systems application frequencies from 869 ~ 894MHz
This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency. High In/Output impedance,
High power density.
Electrical Specifications @ Vds =28V, Ta=25℃
PARAMETER
UNIT
MIN
TYP
MAX
Frequency Range
MHz
869
-
894
Power Gain
34
37
39
Gain Flatness
dB
-
0.6
-
Input Return Loss
-
-10
-6.0
Pout @ Average
dBm
-
33
-
Pout @ Psat
dBm
40.8
41.5
-
ACLR @ BW 10MHz
-
dBc
LTE (PAPR 7.5dB)
-
-32
-27
-53
-
Drain Efficiency
%
23
26
-
Total Ids
mA
-
280
-
V
-
Supply Voltage
V
-
-3.0
-2.0
28
-
Caution
The drain voltage must be supplied to the device after the gate voltage is supplied
Turn on : Turn on the Gate Voltage supply and last turn On the Drain voltage supplies
Turn off : Turn off the Drain Voltage and last turn off the Gate voltage
Note
1. ACLR Measured Pout=33dBm @ fc± 10MHz / 9.015MHz
LTE 10MHz 1FA PAPR=7.5dB @ 0.01% probability on CCDF, (DPD Engine: Optichron OP6180)
2. HT Series have internal DC blocking capacitors at the RF input and output ports
CONDITION
ZS = ZL = 50 ohm
Amp : Idq1 = 50mA
Idq2 = 105mA
Pulse Width=50us, 10%Duty
Non DPD
With DPD
Pout @ Average
Gate Bias (Vgs1 and Vgs2)
Main Bias(Vds)
Mechanical Specifications
PARAMETER
Mass
Dimension
UNIT
g
㎜
Korean Facilities : 82-31-8069-3036 / [e-mail]
US Facility : 919-677-8780 / [e-mail]
TYP
2
20.5 x 15 x 3.5
1/8
REMARK
-
-
All specifications may change without notice
Version 1.0