SE3455 Datasheet, PDF (1/4 Pages) Honeywell Solid State Electronics Center – GaAs Infrared Emitting Diode

SE3455/5455
GaAs Infrared Emitting Diode
FEATURES
• TO-46 metal can package
• Choice of flat window or lensed package
• 90° or 20° (nominal) beam angle option
• 935 nm wavelength
• Wide operating temperature range
(-55°C to +125°C)
• Ideal for high pulsed current applications
• Mechanically and spectrally matched to
SD3421/5421 photodiode, SD3443/5443/5491
phototransistor, SD3410/5410 photodarlington and
SD5600 series Schmitt trigger
DESCRIPTION
The SE3455/5455 series consists of a gallium arsenide
infrared emitting diode mounted in a TO-46 metal can
package. The SE3455 series has flat window cans
providing a wide beam angle, while the SE5455 series
has glass lensed cans providing a narrow beam angle.
These devices are constructed with dual bond wires
suitable for pulsed current applications. The TO-46
packages offer high power dissipation capability and are
ideally suited for operation in hostile environments.
OUTLINE DIMENSIONS in inches (mm)
Tolerance 3 plc decimals ±0.005(0.12)
2 plc decimals ±0.020(0.51)
SE3455
.219 (5.56) _DIA.
.208 (5.28)
.188 (4.77) _DIA.
.178 (4.52)
.500
(12.70)
MIN.
45°
.046(1.17)
.036(.91)
.100(2.54)DIA
1 NOM
.160 (4.06) _DIA.
.137 (3.48)
.015
(0.36)
.153 (3.89)
.140 (3.56)
2
.048(1.22)
.028(.71)
.018 _DIA.
(.460)
LEADS:
1. CATHODE (TAB)
2. ANODE (CASE)
SE5455
.219 (5.56) _DIA.
.208 (5.28)
.188 (4.77) _DIA.
.178 (4.52)
.500
(12.70)
MIN.
45°
.046(1.17)
.036(.91)
.100(2.54)DIA
1 NOM
.160 (4.06) _DIA.
.137 (3.48)
.247 (6.27)
.224 (5.89)
.015
(0.36)
.200
5.08
.048(1.22)
2
.028(.71)
.018 _DIA.
(.460)
LEADS:
1. CATHODE (TAB)
2. ANODE (CASE)
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