SDP8405 Datasheet, PDF (1/4 Pages) Honeywell Solid State Electronics Center – Silicon Phototransistor

SDP8405
Silicon Phototransistor
FEATURES
• T-1 plastic package
• 20¡ (nominal) acceptance angle
• Consistent optical properties
• Wide sensitivity ranges
• Mechanically and spectrally matched to
SEP8505 and SEP8705 infrared emitting diodes
17 September 1997
DESCRIPTION
The SDP8405 is an NPN silicon phototransistor transfer
molded in a T-1 clear plastic package. Transfer molding
of this device assures superior optical centerline
performance compared to other molding processes.
Lead lengths are staggered to provide a simple method
of polarity identification.
INFRA-22.TIF
OUTLINE DIMENSIONS in inches (mm)
Tolerance 3 plc decimals ±0.005(0.12)
2 plc decimals ±0.020(0.51)
.200(5.08)
.180(4.57)
.125 (3.18)
.115 (2.92) ^DIA.
.03 (.76)
.05(1.27)
COLLECTOR
EMITTER
.250
(6.35)
MAX.
.500
(12.7)
MIN.
.020 SQ.LEAD TYP.
(.51)
.050
(1.27)
.155
DIA.
(3.94)
© Honeywell Inc.
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Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.