HT6256 Datasheet, PDF (1/8 Pages) Honeywell Solid State Electronics Center – HIGH TEMPERATURE 32K x 8 STATIC RAM

HTMOS^TM High Temperature Products
HIGH TEMPERATURE 32K x 8 STATIC RAM
HT6256
FEATURES
APPLICATONS
• Specified Over -55 to +225°C
• Fabricated with HTMOS™ IV Silicon on Insulator (SOI)
• Read/Write Cycle Times ≤ 50 ns Support 20 MHz Clock
• Asynchronous Operation
• CMOS Input/Output Buffers
• Single 5 V ± 10% Power Supply
• Hermetic 28-Lead Ceramic DIP
• Down-Hole Oil Well
• Avionics
• Turbine Engine Control
• Industrial Process Control
• Nuclear Reactor
• Electric Power Conversion
• Heavy Duty Internal Combustion Engines
GENERAL DESCRIPTION
The 32K x 8 High Temperature Static RAM is a high
performance 32,768 word x 8-bit static random access
memory with industry-standard functionality. It is fabri-
cated with Honeywell’s HTMOS™ technology, and is
designed for use in systems operating in severe high
temperature environments.
The RAM requires only a single 5 V ± 10% power supply
and has CMOS compatible I/O. Power consumption is
typically less than 30 mW/MHz in operation, and less than
10 mW when de-selected. The RAM read operation is fully
asynchronous, with an associated typical access time of
50 ns at 5 V.
The RAM provides guaranteed performance over the full
-55 to +225°C temperature range. Typically, parts will
operate up to +300°C for a year, with derated perfor-
mance. All parts are burned in at 250°C to eliminate infant
mortality.
PACKAGE PINOUT
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
1
28
2
27
3
26
4
25
5
24
6
23
7 ^Top 22
8 View 21
9
20
10
19
11
18
12
17
13
16
14
15
VDD
NWE
A13
A8
A9
A11
NOE
A10
NCS
DQ7
DQ6
DQ5
DQ4
DQ3
Solid State Electronics Center • 12001 State Highway 55, Plymouth, MN 55441 • [phone] • http://www.ssec.honeywell.com