SE5470-003 Datasheet, PDF (1/4 Pages) Honeywell Accelerometers – AlGaAs Infrared Emitting Diode

SE3470/5470
AlGaAs Infrared Emitting Diode
FEATURES
• TO-46 metal can package
• Choice of flat window or lensed package
• 90¡ or 20¡ (nominal) beam angle option
• 880 nm wavelength
• Higher output power than GaAs at equivalent
drive currents
• Wide operating temperature range
(- 55¡C to +125¡C)
• Ideal for high pulsed current applications
• Mechanically and spectrally matched to
SD3421/5421 photodiode,
SD3443/5443/5491phototransistor,
SD3410/5410 photodarlington and SD5600
series Schmitt trigger
DESCRIPTION
The SE3470/5470 series consists of aluminum gallium
arsenide infrared emitting diode mounted in a TO-46
metal can package. The SE3470 series has flat window
cans providing a wide beam angle, while the SE5470
series has glass lensed cans providing a narrow beam
angle. These devices typically exhibit 70% greater
power output than gallium arsenide devices at the same
forward current. The TO-46 packages offer high power
dissipation capability and are ideally suited for operation
in hostile environments.
INFRA-83.TIF
OUTLINE DIMENSIONS in inches (mm)
Tolerance 3 plc decimals ±0.005(0.12)
2 plc decimals ±0.020(0.51)
SE3470
.219 (5.56) _DIA.
.208 (5.28)
.188 (4.77) _DIA.
.178 (4.52)
.500
(12.70)
MIN.
45°
.046(1.17)
.036(.91)
.100(2.54)DIA
1 NOM
.160 (4.06) _DIA.
.137 (3.48)
.015
(0.36)
.153 (3.89)
.140 (3.56)
2
.048(1.22)
.028(.71)
.018
DIA.
(.460)
LEADS:
1. CATHODE (TAB)
2. ANODE (CASE)
DIM_005a.ds4
SE5470
.219 (5.56) _DIA.
.208 (5.28)
.188 (4.77) _DIA.
.178 (4.52)
.500
(12.70)
MIN.
45°
.046(1.17)
.036(.91)
.100(2.54)DIA
1 NOM
.160 (4.06) _DIA.
.137 (3.48)
.247 (6.27)
.224 (5.89)
DIM_005b.ds4
.015
(0.36)
.200
5.08
2
.048(1.22)
.028(.71)
.018
DIA.
(.460)
LEADS:
1. CATHODE (TAB)
2. ANODE (CASE)
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32
h
changes in order to improve design and
supply the best products possible.