SE2470-001 Datasheet, PDF (1/4 Pages) Honeywell Accelerometers – AlGaAs Infrared Emitting Diode

SE2470
AlGaAs Infrared Emitting Diode
FEATURES
• Miniature, hermetically sealed, pill style, metal
can package
• 18¡ (nominal) beam angle
• Wide operating temperature range
(- 55¡C to +125¡C)
• Higher power output than GaAs at equivalent
drive currents
• Ideal for direct mounting to printed circuit boards
• 880 nm wavelength
• Mechanically and spectrally matched to SD2420
photodiode, SD2440 phototransistor and
SD2410 photodarlington
DESCRIPTION
The SE2470 is a high intensity aluminum gallium
arsenide infrared emitting diode mounted in a
hermetically sealed, glass lensed, metal can package.
This package directly mounts in double sided PC
boards. These devices typically exhibit 70% greater
power intensity than gallium arsenide devices at the
same forward current.
INFRA--1.TIF
OUTLINE DIMENSIONS in inches (mm)
Tolerance 3 plc decimals ±0.005(0.12)
2 plc decimals ±0.020(0.51)
DIM_002.ds4
Honeywell reserves the right to make
20
h
changes in order to improve design and
supply the best products possible.